Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...

Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...

Hitachi, Ltd. (NYSE: HIT / TSE: 6501) in cooperation with Elpida Memory, Inc. (TSE: 6665), have proposed a new DRAM(*1) circuit design enabling 0.4-V operation. The proposed array employs a twin cell ...

TL;DR: SK hynix unveiled a 30-year DRAM roadmap featuring 4F2 Vertical Gate and 3D DRAM technologies to enhance performance, integration, and power efficiency beyond 10nm scales. These innovations aim ...

Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...

VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...

NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...

Samsung Electronics and SK hynix are accelerating the development of next-generation three-dimensional (3D) dynamic random-access memory (DRAM), with both companies aiming to complete and test early ...

NEO's IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory computing, and ...