HfO 2 铁电薄膜材料在信息存储、传感技术、类脑计算以及仿生电子器件等领域均有重要应用，然而目前学术界对HfO 2 薄膜的铁电相变和相稳定机理尚无统一的认识，薄膜中铁电相的调控和薄膜铁电性能稳定性的控制仍是氧化铪基铁电薄膜研究领域的重大挑战。

BEIJING, Jan. 23 (Xinhua) -- Chinese researchers recently made a breakthrough in ferroelectric materials that promises to dramatically increase information storage density. Their findings were on ...