Fifth generation technology improves the characteristics of fourth generation IGBT and (free-wheeling diode) FWD devices, both switching behavior and electrical losses are improved. Furthermore, an ...

Monolithic bidirectional 1200 V GaN switches (MBDS) with integrated free-wheeling diodes, manufactured at Fraunhofer IAF in a multi-project wafer run using GaN-on-insulator technology ...

Powerex announces the availability of a 600V/1000A single fast diode module designated as QRS061K001. This higher current fast diode was developed for use on 230 Volt AC lines or 340 Volt DC lines and ...