Researchers have realized a f_T/f_MAX 245GHz/450GHz SiGe:C heterojunction bipolar transistor (HBT) device, a key enabler for future high-volume ...

Renesas Electronics has announced the availability of a new SiGe:C heterojunction bipolar transistor, the NESG7030M04, for use as a low noise amplifier transistor for wireless LAN systems, satellite ...

Researchers at the University of Illinois at Urbana-Champaign have demonstrated the laser operation of a heterojunction bipolar light-emitting transistor. The scientists describe the fabrication and ...

Applications of energy band models for semiconductors. Carrier statistics and transport. Diodes, bipolar and field-effect transistors. Integrated circuits. Heterojunction devices. COURSE GOALS: The ...

An indium phosphide-based double heterojunction bipolar transistor (DHBT) with a maximum frequency of 450GHz and a transition frequency of 282GHz has been reported by researchers at the University of ...

In 2004, electrical engineering pioneers Nick Holonyak, Jr. and Milton Feng at the University of Illinois invented the transistor laser--a three-port device that incorporated quantum-wells in the base ...

Researchers at the University of Illinois at Urbana-Champaign have demonstrated the room-temperature operation of a heterojunction bipolar transistor laser. "We have shown that the transistor laser, ...

BAE Systems in the US has been working with Vitesse Semiconductor and the University of Illinois to design what they claim is one of the fastest semiconductor devices ever produced. Made using an ...