A transistor fabricated from the crystalline phase of an organic semiconductor material could provide a path to improved switching speeds — rivalling those of devices built from inorganic materials ...

In this online engineering specialization, you will master the fundamentals of semiconductors and evaluate the performance of electronic devices by completing courses in semiconductor physics, PN ...

Transistors come in different flavors. Tubes used an electric field to regulate current flow, and researchers wanted to find something that worked the same way without the drawbacks like vacuum and ...

Phoenix, Ariz.—ON Semiconductor has expanded its low Vce(sat) bipolar junction transistors (BJTs) portfolio to include PNP and NPN devices that incorporate advanced silicon technology. According to On ...

Quantum-tunneling junction technology promises to enable production of smaller, more efficient, and easier-to-produce semiconductors for digital, analog, and power applications. In case you missed the ...

In an effort to achieve higher power density, and to meet strict efficiency regulations and system up-time requirements, industrial and power electronic designers are challenged with constantly ...

GeneSiC’s SiC-based 1200 V/220 mΩ Super Junction Transistors (SJTs) feature high temperature (> 300 °C) operation capability, ultra-fast switching transitions ( 15 ns), extremely low losses, and a ...

It used to be a rite of passage to be able to do the math necessary to design various bipolar transistor amplifier configurations. This doesn’t come up as often as it used to, but it is still a good ...

Transistors are tiny electronic components that act as switches and amplifiers, and they dwell at the heart of modern technology. In simple terms, a transistor can turn a flow of electricity on or off ...

Share on Facebook (opens in a new window) Share on X (opens in a new window) Share on Reddit (opens in a new window) Share on Hacker News (opens in a new window) Share on Flipboard (opens in a new ...

A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, Johannes Kepler University, Universidad de Granada, and Max Planck Institute for ...