Metal-Semiconductor Field-Effect Transistors (MESFETs) have long been pivotal in bridging fundamental semiconductor physics with high-performance electronic applications. As devices that combine metal ...
Organic electrochemical transistors (OECTs) have rapidly advanced as versatile components in the realm of bioelectronics, wearable devices and neuromorphic systems. Their unique transduction mechanism ...
Glasgow University researchers have led work that could lead to a new generation of diamond-based transistors for use in high-power electronics. The team has found a new way to use diamond as the ...
This application note presents the new 1600 V BIMOSFET transistor giving way to new applications. It presents the many applications of BIMOSFET and its DC electrical performance. This application note ...
Application of Graphene to High-Speed Transistors: Expectations and Challenges (17 pages) This paper is an excellent summary of the background and progress and challenges for using graphene for then ...
Lowell, MA — Tyco Electronics M/A-COM has announced a line-up of three high-power bipolar transistors designed for pulsed avionics and radar applications, ranging from 960 MHz to 1215 MHz. The ...
M/A-COM, a unit of Tyco Electronics has two new LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors designed for INMARSAT applications. INMARSAT is the satellite service that serves a ...
(Nanowerk Spotlight) On December 26, 1947, the two physicists Walter Brattain and John Bardeen, officially demonstrated the first point-contact transistor at Bell Labs. Later, in January 1948, William ...
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