Nature

Nanometre-scale electronics with III–V compound semiconductors

The microelectronics revolution might best be characterized by the motto 'smaller is better'. A unique attribute of the silicon metal–oxide–semiconductor field-effect transistor (MOSFET), the ...
EDN

Sony develops 2-layer transistor pixel technology for CMOS image sensors

Sony Semiconductor Solutions Corp. has claimed the first stacked CMOS image sensor technology with a 2-layer transistor pixel. The company’s proprietary technology separates photodiodes and pixel ...
EDN

Intel crafts transistor with 20-nm gate length

KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...
Indiatimes

Sony Develops World's First Stacked CMOS Image Sensor Technology with 2-Layer Transistor Pixel

Disclaimer: The following press release comes to you under an arrangement with NewsVoir. PTI takes no editorial responsibility for the same. (Eds: Disclaimer: The following press release comes to you ...
CIOL

Fujitsu develops CMOS logic-based HV transistor

BANGALORE, INDIA: Fujitsu Microelectronics Asia Pte Ltd (FMAL) announced that Fujitsu Laboratories Ltd and Fujitsu Microelectronics Ltd have co-developed a CMOS logic process-based high-voltage ...
Asian News International

Sony develops world's first stacked CMOS image sensor technology with 2-layer transistor pixel

New Delhi [India], December 17 (ANI/NewsVoir): Sony Semiconductor Solutions Corporation ("Sony") has succeeded in developing the world's first stacked CMOS image sensor technology with 2-Layer ...
ExtremeTech

Researchers create CMOS-compatible, 30nm programmable graphene transistor

Electronic engineers at Japan's GNC and AIST research centers have successfully created graphene transistors that are constructed and operated in a way that redefines 50 years of transistor ...