Devices are fine-tuned for power conversion and motion control in consumer and industrial applications STMicroelectronics says its new high-voltage half-bridge gate drivers for GaN applications add ...

Research grant focuses on high voltage switches to help prevent blackouts and improve grid efficiency A research team led by the University at Buffalo has been awarded a $2,847,754 grant from the US ...

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) 650V SiC Schottky diodes. Rated at 4A, 6A, 8A, 10A, and 12A, the ...

PEMD project team wins Innovate UK award for bridging gap between education and industry The University of Sheffield's School of Electrical and Electronic Engineering in collaboration with Matrix TSL ...

Toshiba has started volume shipments of the SmartMCD Series of gate driver ICs with embedded microcontroller (MCU). The first product, TB9M003FG, is suitable for sensorless control of three-phase ...

150V TrenchFET device in PowerPAK SO-8S features industry's lowest RDS(ON) of 5.6mΩ at 10V Vishay Intertechnology has introduced a150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S ...

Automotive gate driver for SiC MOSFETs and IGBTs offers high integration, galvanic isolation and diagnostics STMicroelectronics’ STGAP4S galvanically isolated automotive gate driver for SiC MOSFETs ...

Diodes Inc has introduces the AP74502Q and AP74502HQ automotive-compliant 80V ideal diode controllers, providing protection against reverse connections and voltage transients. Typical applications ...

Researchers from Wuhan University (WHU), University of Science and Technology of China (USTC), and China Electronics Product Reliability and Environmental Testing Research Institute (CEPREI) have ...

Silicon-based semiconductor technologies, such as power MOSFETs and IGBTs, are essential in every modern power electronics system and play a crucial role in controlling and converting electrical ...

New device targets high power and next generation systems for use in space EPC Space has announced a radiation-hardened 300V GaN FET for high-voltage, high-power space applications, including ...

Investment in open-access equipment will help researchers and companies test power applications and improve semiconductor packaging The UK Government has announced £16.6 million investment to give ...