Abstract: In this work, a semi-analytical compact model is developed to quantify the impact of random process variations on nanosheet field-effect transistors (NSFETs) at the 3nm technology node.

Abstract: Accurate and efficient modeling of lateral double-diffused MOS (LDMOS) devices is critical for process optimization and reliability analysis, especially under limited simulation budgets.

Just in time for Heart Month, the laboratory of University de Montréal medical professor and CHU Sainte-Justine researcher Rubén Marín‑Juez has unveiled the first comprehensive atlas of coronary ...

Kinematic modeling is central to understanding and interpreting motion across both biological and artificial systems. Traditionally underpinned by ...

Rutgers scientists found Antarctic glacier meltwater supplies far less iron than assumed, challenging a key theory on natural carbon dioxide removal.