Abstract: The field penetration through a circular aperture in an infinite plane with a nonzero surface impedance excited by an axially symmetric source is analytically investigated. The problem is ...
Abstract: A new SOS (Silicon-On-Sapphire) LDMOS structure with Linear Doping Profile (LDP), or Variation on Lateral Doping (VLD) in the drift region, suitable for high voltage applications (> 600V) is ...
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