Toshiba Electronics Europe GmbH has added the DTMOSVI 600V HSD (High-Speed Diode) N-channel power MOSFETs to the DTMOSVI 600V Series, featuring a super junction structure. The seven new products are ...

Toshiba Electronics Europe has expanded its DTMOSVI 600V portfolio with a new line of N‑channel power MOSFETs.

Today, to reduce switching losses, in the brief intervals in which voltage and current are present during the ON and OFF states, resonant power supplies and “soft switching” are used, and we will ...

Abstract: SiC MOSFETs demonstrate superior characteristics such as high switching speed and high breakdown voltage, the development of series-connected SiC MOSFETs-based pulse power switches has ...

Abstract: SiC MOSFETS, with advantages such as high switching speed and high breakdown voltage, are a key focus in the development of pulsed power switches. The snubber capacitor self-balancing ...

Renesas Electronics has introduced what is claims is the industry’s first bidirectional switch using depletion-mode (d-mode) ...

New switch architecture enables single-stage designs, cutting components while boosting efficiency across solar, EV, and AI ...

First-of-its-kind bidirectional GaN technology with DC blocking dramatically reduces switch count needed for power conversion ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a photovoltaic-output photocoupler, “TLX9920”, in a ...

Renesas unveils what it claims is the industry’s first bidirectional switch based on depletion‑mode GaN technology.

A power device could change how high voltage systems are designed by simplifying architectures, reducing cost and replacing ...