Abstract: In this work, a semi-analytical compact model is developed to quantify the impact of random process variations on nanosheet field-effect transistors (NSFETs) at the 3nm technology node.

Abstract: In advanced optical lithography, it is critical to obtain a mask with high fidelity to a target pattern and strong tolerance to process variation within a short time. This article formulates ...

SARASOTA, Fla. – Jackson Holliday won’t be playing second base on Opening Day. The injury recap this morning from president of baseball operations/general manager Mike Elias came with the usual ...