Abstract: This article proposes a circuit configuration for an area- and energy-efficient nonvolatile register using magnetic tunnel junction (MTJ) devices, suitable for persistent computation in ...
Abstract: Spin orbit torque (SOT)-based magnetic tunneling junction (MTJ) switching is central to magnetic random-access memories (MRAMs) where additional physical effects such as domain wall (DW) ...
一些您可能无法访问的结果已被隐去。
显示无法访问的结果