Abstract: In this article, a gate all around (GAA) dual metal gate (DMG) silicon carbide nanowire junctionless field effect transistor (SiC NW JLFET) has been reported. The proposed device is analysed ...

Abstract: A novel structure using p-doped polysilicon with a new program/erase scheme is proposed for the first time in this paper to enhance erase performance in amorphous indium gallium zinc oxide ...